Unisonic Technologies 6N60-CBS
6N60-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.| Part No. | 6N60-CBS |
|---|---|
| Datasheet | 6N60-CBS Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 1.5Ω @ VGS = 10V, ID = 3.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N60L-TA3-T 6N60G-TA3-T 6N60L-TF1-T 6N60G-TF1-T 6N60L-TF2-T 6N60G-TF2-T 6N60L-TF3-T 6N60G-TF3-T 6N60L-TM3-R 6N60G-TM3-R 6N60L-TN3-R 6N60G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 123 GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel Tape Reel Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-262 .a 6N60-CBS
● MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R205-262 .a 6N60-CBS Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 ±30 V V Drain Current Continuous Pulsed (Note 2) ID ID...
