6N70-ML Key Features
- RDS(ON) ≤ 2.4 Ω @ VGS=10V, ID=3.0A
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
6N70-C | N-CHANNEL POWER MOSFET |
Unisonic Technologies |
6N70-P | N-CHANNEL POWER MOSFET |
| 6N70 | N-Channel MOSFET Transistor | |
Unisonic Technologies |
6N70 | N-CHANNEL POWER MOSFET |
Inchange Semiconductor |
6N70A | N-Channel MOSFET |