Unisonic Technologies 6N90-C
The UTC 6N90-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | 6N90-C |
|---|---|
| Datasheet | 6N90-C Download |
| Manufacturer |  Unisonic Technologies |
| Description | 6A 900V N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
● FEATURES0 * RDS(ON) ≤ 2.3 Ω @ VGS=10V, ID=3.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N90L-TF1-T 6N90G-TF1-T 6N90L-TF3-T 6N90G-TF3-T 6N90L-TQ2-T 6N90G-TQ2-T 6N90L-TQ2-R 6N90G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G C E G C E Packing Tube Tube Tube Tape Reel Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-470.E 6N90-C
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R205-470.E 6N90-C Power MOSFET
●
ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 900 V VGSS ±30 V Drain Current Continuous ID 6 A Pulsed (Note 2) IDM 12 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Not...
