Datasheet4U Logo Datasheet4U.com

6N90-C Datasheet 6a 900v N-channel Power MOSFET

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD 6N90-C 6.0A, 900V N-CHANNEL POWER.

General Description

The UTC 6N90-C provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

 FEATURES0 * RDS(ON) ≤ 2.3 Ω @ VGS=10V, ID=3.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N90L-TF1-T 6N90G-TF1-T 6N90L-TF3-T 6N90G-TF3-T 6N90L-TQ2-T 6N90G-TQ2-T 6N90L-TQ2-R 6N90G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G C E G C E Packing Tube Tube Tube Tape Reel .unisonic..tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-470.E 6N90-C  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD .unisonic..tw 2 of 9 QW-R205-470.E 6N90-C Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 900 V VGSS ±30 V Drain Current Continuous ID 6 A Pulsed (Note 2) IDM 12 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) MOSFET dv/dt Ruggedness EAS dv/dt 360 mJ 4.5 V/ns 50 V/ns Power Dissipation TO-220F/TO-220F1 TO-263 PD 40 W 124 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.

Key Features

  • S0.
  • RDS(ON) ≤ 2.3 Ω @ VGS=10V, ID=3.0A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

6N90-C Distributor