Unisonic Technologies 6NM120
6NM120 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.| Part No. | 6NM120 |
|---|---|
| Datasheet | 6NM120 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 1.7 Ω @ VGS=10V, ID=3.0A * High Switching Speed● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6NM120L-TA3-T 6NM120G-TA3-T 6NM120L-TF1-T 6NM120G-TF1-T 6NM120L-TF2-T 6NM120G-TF2-T 6NM120L-TF3-T 6NM120G-TF3-T 6NM120L-T47-T 6NM120G-T47-T 6NM120L-TN3-R 6NM120G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-247 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-D103.d 6NM120
● MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R502-D103.d 6NM120 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Pulsed Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS I...
