Unisonic Technologies 75NM60
75NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.| Part No. | 75NM60 |
|---|---|
| Datasheet | 75NM60 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 55mΩ @ VGS = 10V, ID = 37.5A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 75NM60L-T64-T 75NM60G-T64-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-264 Pin Assignment 123 GDS Packing Tube
● MARKING Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-444.a 75NM60 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous Pulsed (Note 2) ID IDM 75 150 A A Avalanche Energy Single Pulsed (Note 3) EAS 1188 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 15 V/ns Power Dissipation PD 255 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
