7N100-C - N-CHANNEL MOSFET

Unisonic Technologies

Datasheet Details

Part number	7N100-C
Manufacturer	Unisonic Technologies
File Size	452.27 KB
Description	N-CHANNEL MOSFET
Datasheet	7N100-C Datasheet

General Description

The UTC 7N100-C provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

 FEATURES0 * RDS(ON) ≤ 1.6Ω @ VGS=10V, ID=3.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 1 TO-220F2  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N100L-TF2-T 7N100G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F2 Pin Assignment 123 GDS Packing Tube  MARKING www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-569.A 7N100-C Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1000 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID 7A Pulsed (Note 2) IDM 14 A Avalanche Energy Single Pulsed (Note 3) EAS 174 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.5 V/ns Power Dissipation PD 34 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.

Overview

UNISONIC TECHNOLOGIES CO., LTD 7N100-C 7A, 1000V N-CHANNEL POWER MOSFET Power MOSFET.

Key Features

S0.
RDS(ON) ≤ 1.6Ω @ VGS=10V, ID=3.5A.
Low Reverse Transfer Capacitance.
Fast Switching Capability.
Avalanche Energy Specified.
Improved dv/dt Capability, High Ruggedness.
SYMBOL 1 TO-220F2.

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