Download 7N150-E3 Datasheet PDF
Unisonic Technologies
7N150-E3
DESCRIPTION The UTC 7N150-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. - FEATURES0 - RDS(ON) ≤ 3.8 Ω @ VGS=10V, ID=3.5A - Low Reverse Transfer Capacitance - Fast Switching Capability - Avalanche Energy Specified - Improved dv/dt Capability, High Ruggedness - SYMBOL Power MOSFET TO-220F1 - ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N150L-TF1-T 7N150G-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment Packing Tube - MARKING .unisonic..tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-D272.a Preliminary Power MOSFET - ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS Gate-Source...