Datasheet Details
| Part number | 7N150-E3 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 274.10 KB |
| Description | 1500V N-CHANNEL POWER MOSFET |
| Datasheet |
 7N150-E3 Datasheet
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| Part number | 7N150-E3 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 274.10 KB |
| Description | 1500V N-CHANNEL POWER MOSFET |
| Datasheet |
7N150-E3 Datasheet
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The UTC 7N150-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
1 FEATURES0 * RDS(ON) ≤ 3.8 Ω @ VGS=10V, ID=3.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET TO-220F1 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N150L-TF1-T 7N150G-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-D272.a 7N150-E3 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1500 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous Pulsed (Note 2) ID IDM 7 A 14 A Avalanche Energy Single Pulsed (Note 3) EAS 270 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1 V/ns Power Dissipation PD 55 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
UNISONIC TECHNOLOGIES CO., LTD 7N150-E3 Preliminary 7.0A, 1500V N-CHANNEL POWER MOSFET.
| Part Number | Description |
|---|---|
| 7N100-C | N-CHANNEL MOSFET |
| 7N120-E2 | N-CHANNEL POWER MOSFET |