DESCRIPTION
Power MOSFET The UT C T his de vice can also withstand high energy pulse in the avalanche and the commutation mode. FEATURES
* Low Gate Charge: 5.8nC (TYP.) * Low CRSS: 10 pF (TYP.) * RDS(ON) = 0.58Ω @VGS = 10 V * Fast Switching * Improved dv/dt Capability SYMBOL ORDERING INFORMATION Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube Ordering Number Lead Free Halogen Free 7N20ZL-TN3-R 7N20ZG-TN3-R 7N20ZL-TN3-T 7N20ZG-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-810.A 7N20Z ABSOLUTE MAXIMUM RATINGS
(TC =25°C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain -Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current TC =25°C I A D 7 Pulsed Drain Current (Note 2) IDM 28 A Single Pulsed Avalanche Energy (Note 3) EAS 130 mJ Power Dissipation PD 2.5 W Operating Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.