Unisonic Technologies 7N65-CB
7N65-CB is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.| Part No. | 7N65-CB |
|---|---|
| Datasheet | 7N65-CB Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 1.1 Ω @ VGS = 10 V, ID = 3.5 A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 7N65L-TA3-T 7N65G-TA3-T TO-220 7N65L-TF3-T 7N65G-TF3-T TO-220F 7N65L-TF1-T 7N65G-TF1-T TO-220F1 7N65L-TF2-T 7N65G-TF2-T TO-220F2 7N65L-TF3T-T 7N65G-TF3T-T TO-220F3 7N65L-TM3-T 7N65G-TM3-T TO-251 7N65L-TN3-R 7N65G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12 3 GD S GD S GD S GD S GD S GD S GD S Packing Tube Tube Tube Tube Tube Tube Tape Reel Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-114.a 7N65-CB
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R205-114.a 7N65-CB Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Avalanche Current (Note 2) VGSS IAR...
