Unisonic Technologies 7N65-MH2
7N65-MH2 is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.| Part No. | 7N65-MH2 |
|---|---|
| Datasheet | 7N65-MH2 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 1.25 Ω @ VGS=10V, ID=3.5A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 7N65L-TA3-T 7N65G-TA3-T 7N65L-TF1-T 7N65G-TF1-T 7N65L-TF2-T 7N65G-TF2-T 7N65L-TF3-T 7N65G-TF3-T 7N65L-TM3-T 7N65G-TM3-T 7N65L-TN3-R 7N65G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-691.B 7N65-MH2
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R205-691.B 7N65-MH2 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 650 V VGSS ±30 V Continuous Drain Current Pulsed Drain Current (Note 2) ID 7 A IDM 1...
