Unisonic Technologies 80N06
80N06 is an N-channel MOSFET using UTC advanced technology. The UTC 80N06 is suitable for power supply (secondary synchronous rectification), industrial and primary switch etc.DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 8.5mΩ @ VGS = 10 V, ID = 40 A● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 80N06L-TA3-T 80N06G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube
● MARKING Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-168.b 80N06 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current Continuous ID 80 A Pulsed Drain Current Pulsed (Note 2) IDM 320 A Avalanche Current (Note 3) IAR 58 A Avalanche energy Single Pulsed (Note 3) EAS 168 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 6.0 V/nS Power Dissipation PD 200 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.