Datasheet Details
| Part number | 8N100-C |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 673.22 KB |
| Description | 1000V N-CHANNEL POWER MOSFET |
| Datasheet | 8N100-C-UTC.pdf |
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Overview: UNISONIC TECHNOLOGIES CO., LTD 8N100-C 8.0A, 1000V N-CHANNEL POWER.
| Part number | 8N100-C |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 673.22 KB |
| Description | 1000V N-CHANNEL POWER MOSFET |
| Datasheet | 8N100-C-UTC.pdf |
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|
|
The UTC 8N100-C provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
FEATURES0 * RDS(ON) ≤ 1.45 Ω @ VGS=10V, ID=4.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N100L-TA3-T 8N100G-TA3-T 8N100L-TF1-T 8N100G-TF1-T 8N100L-TF2-T 8N100G-TF2-T 8N100L-TF3-T 8N100G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-465.C 8N100-C MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R205-465.C 8N100-C Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1000 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous Pulsed (Note 2) ID IDM 8 A 16 A Avalanche Energy Single Pulsed (Note 3) EAS 843 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.64 V/ns TO-220 180 W Power Dissipation TO-220F/TO-220F1 PD TO-220F2 60 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
| Part Number | Description |
|---|---|
| 8N100-FC | N-CHANNEL MOSFET |