Unisonic Technologies 8N80-C
The UTC 8N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | 8N80-C |
|---|---|
| Datasheet | 8N80-C Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) ≤ 1.4Ω @ VGS=10V, ID=4.0A * Fast Switching Capability * Avalanche Energy Specified● SYMBOL Power MOSFET
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 8N80L-TA3-T 8N80G-TA3-T 8N80L-TF1-T 8N80G-TF1-T 8N80L-TF2-T 8N80G-TF2-T 8N80L-TF3-T 8N80G-TF3-T 8N80L-T2Q-T 8N80G-T2Q-T 8N80L-TQ2-T 8N80G-TQ2-T 8N80L-TQ2-R 8N80G-TQ2-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-262 TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tube Tape Reel Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-303.F 8N80-C
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R205-303.F 8N80-C Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage Drain Current Avalanche Current (Note 2) Continuous Pulsed (Note 2) VGSS ID IDM IAR ±30 8.0 32 8 V A A A A...
