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8N80-C - N-CHANNEL MOSFET

General Description

The UTC 8N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 1.4Ω @ VGS=10V, ID=4.0A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • SYMBOL Power MOSFET.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 8N80-C 8A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 1.4Ω @ VGS=10V, ID=4.