Unisonic Technologies 8NM60
8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.| Part No. | 8NM60 |
|---|---|
| Datasheet | 8NM60 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 0.75 Ω @ VGS=10V, ID=4.0A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Order Number Lead Free Halogen Free 8NM60L-TA3-T 8NM60G-TA3-T 8NM60L-TF1-T 8NM60G-TF1-T 8NM60L-TF2-T 8NM60G-TF2-T 8NM60L-TF3-T 8NM60G-TF3-T 8NM60L-TM3-T 8NM60G-TM3-T 8NM60L-TN3-R 8NM60G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-088.E 8NM60
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R205-088.E 8NM60 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID Pulsed (Note 2) IDM 8.0 A 32 A Ava...
