Unisonic Technologies 8NM80-Q
8NM80-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.| Part No. | 8NM80-Q |
|---|---|
| Datasheet | 8NM80-Q Download |
| Manufacturer |  Unisonic Technologies |
| Description | 800V N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 0.75 Ω @ VGS=10V, ID=4.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8NM80L-TA3-T 8NM80G-TA3-T 8NM80L-TF1-T 8NM80G-TF1-T 8NM80L-TF3-T 8NM80G-TF3-T 8NM80L-TM3-T 8NM80G-TM3-T 8NM80L-TN3-R 8NM80G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-744.D 8NM80-Q
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R205-744.D 8NM80-Q Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current Continuous TC= 25°C TC=100°C ID 8 A 5.2 A Pulsed Drain Current Pulsed (Note...
