8NM80-Q Datasheet (PDF) Download
Unisonic Technologies
8NM80-Q

Description

The UTC 8NM80-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

Key Features

  • * RDS(ON) ≤ 0.75 Ω @ VGS=10V, ID=4.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
  • SYMBOL Power MOSFET