Unisonic Technologies 9012
PNP Silicon Transistor
| Part No. | 9012 |
|---|---|
| Datasheet | 9012 Download |
| Manufacturer |  Unisonic Technologies |
| Description | PNP Silicon Transistor |
| Buy | Stock & Price |
FEATURES
*High total power dissipation. (625mW) *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9012L-x-T92-B 9012G-x-T92-B 9012L-x-T92-K 9012G-x-T92-K Note: Pin Assignment: B: Base E: Emitter C: Collector 1 TO-92 Package TO-92 TO-92 Pin Assignment 123 EBC EBC Packing Tape Box Bulk
● MARKING INFORMATION PACKAGE TO-92 MARKING Copyright © 2014 Unisonic Technologies Co., LTD 1 of 3 QW-R201-029.B 9012 PNP SILICON EPITAXIAL TRANSISTOR
● ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-base voltage Collector-emitter voltage VCBO VCEO -40 -20 V V Emitter-base voltage Collector current VEBO IC -5 -500 V mA Collector dissipation Junction Temperature PC 625 mW TJ 150 C Storage Temperature TSTG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
