Unisonic Technologies 9014C
NPN Silicon Transistor
| Part No. | 9014C |
|---|---|
| Datasheet | 9014C Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
FEATURES
*High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC 9015 1 TO-92 1: EMITTER 2: BASE 3: COLLECTORABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Pc Tj TSTG RATING 50 45 5 100 450 150 -55 ~ +150 UNIT V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Output Capacitance Current gain-Bandwidth Porduct Noise Figure SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(on) Cob fT NF TEST CONDITIONS Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, Ic=0 VCB=50V...