Unisonic Technologies 9N100
9N100 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.| Part No. | 9N100 |
|---|---|
| Datasheet | 9N100 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC The UTC 9N100 is generally applied in high efficiency switch mode power supplies.●
FEATURES
* RDS(ON)<1.7Ω @ VGS=10V * Fast Switching Speed * 100% Avalanche Tested * Improved dv/dt Capability● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N100L-T47-T 9N100G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-247 Pin Assignment 123 GDS Packing Tube
● MARKING INFORMATION Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-735.b 9N100 Preliminary Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 1000 V Gate to Source Voltage Continuous Drain Current (TC=25°C) VGSS ID ±30 V 9A Pulsed Drain Current (Note 1) Avalanche Current (Note 1) IDM 36 A IAR 9 A Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 3) EAS dv/dt 600 mJ 4.0 V/ns Power Dissipation (TC=25°C) Linear Derating Factor above TC=25°C PD 160 W 1.28 W/°C Junction Temperature Storage Temperature TJ TSTG +150 -55~+150 °C °C Note: 1.
