Datasheet Details
| Part number | 9N150 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 660.34 KB |
| Description | 1500V N-CHANNEL POWER MOSFET |
| Download | 9N150 Download (PDF) |
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Overview: UNISONIC TECHNOLOGIES CO., LTD 9N150 9.0A, 1500V N-CHANNEL POWER.
| Part number | 9N150 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 660.34 KB |
| Description | 1500V N-CHANNEL POWER MOSFET |
| Download | 9N150 Download (PDF) |
|
|
|
The UTC 9N150 provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
FEATURES0 * RDS(ON) ≤ 2.1 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N150L-T47-T 9N150G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-247 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-D64.B 9N150 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1500 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID Pulsed (Note 2) IDM 9 A 18 A Avalanche Energy Single Pulsed (Note 3) EAS 453 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.3 V/ns Power Dissipation PD 320 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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9N150 | N-channel MOSFET | STMicroelectronics |
| Part Number | Description |
|---|---|
| 9N120-E3 | N-CHANNEL POWER MOSFET |