Unisonic Technologies 9N65K-MT
9N65K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.| Part No. | 9N65K-MT |
|---|---|
| Datasheet | 9N65K-MT Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC The UTC 9N65K-MT is generally applied in high efficiency switch mode power supplies and uninterruptible power supplies.●
FEATURES
* RDS(ON) < 1.1 Ω @ VGS = 10 V, , ID = 5.1 A * High Switching Speed * Improved dv/dt Capability * 100% Avalanche Tested● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 9N65K-L-TF2-T 9N65K-G-TF2-T TO-220F2 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GD S Packing Tube
● MARKING Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-017.c 9N65K-MT Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Drain Current Continuous, @TC=25°C VGSS@10V @TC=100°C Pulsed (Note 2) VGSS ID IDM ±30 9 5.4 36 V A A A Avalanche Energy Repetitive (Note 3) Peak Diode Recovery dv/dt (Note 3) EAS dv/dt 375 mJ 2.8 V/ns Power Dissipation Derate above 25°C PD 49 W 0.39 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1.
