Unisonic Technologies 9N70
9N70 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.| Part No. | 9N70 |
|---|---|
| Datasheet | 9N70 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) <1.3Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 10 pF) * High switching Speed * 100% avalanche tested * Improved dv/dt capability● SYMBOL Power MOSFET
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 9N70L-TA3-T 9N70G-TA3-T 9N70L-TF3-T 9N70G-TF3-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F Pin Assignment 123 GDS GDS Packing Tube Tube Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-617.b 9N70 Preliminary Power MOSFET
●
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous TC=25°C VGS @ 10V TC=100°C ID 9A 5A Pulsed (Note 2) IDM 40 A Avalanche Current Avalanche Energy Single Pulsed (Note 3) Repetitive Power Dissipation (TC=25°C) TO-220 TO-220F IAR EAS EAR PD 9A 305 mJ 9 mJ 156 44 W Linear Derating Factor 1.25 W/°C Junction Temperature Storage Temperature TJ TSTG +150 -55~+150 °C °C Notes: 1.
