Unisonic Technologies 9N90-Q
The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | 9N90-Q |
|---|---|
| Datasheet | 9N90-Q Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) < 1.4Ω @ VGS = 10V, ID = 4.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N90L-TA3-T 9N90G-TA3-T 9N90L-T3P-T 9N90G-T3P-T Package TO-220 TO-3P Pin Assignment 123 GDS GDS Packing Tube Tube
● MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A93.B 9N90-Q Power MOSFET
● ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 900 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (TC = 25°C) ID 9.0 A Pulsed Drain Current (Note 2) IDM 36 A Avalanche Current (Note 2) IAR 9.0 A Avalanche Energy Single Pulsed(Note 3) Repetitive(Note 2) EAS EAR 500 28 mJ mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns Power Dissipation TO-220 TO-3P Linear Derating Factor above TC = TO-220 25°C TO-3P 147 W PD 208 1.176 W W/°C 1.66 W/°C Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
