Unisonic Technologies 9N95
The UTC 9N95 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | 9N95 |
|---|---|
| Datasheet | 9N95 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) ≤ 1.4Ω @ VGS=10V, ID=4.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 9N95L-T47-T 9N95G-T47-T Pin Assignment: G: Gate D: Drain S: Source Package TO-247 Pin Assignment 123 GDS Packing Tube
● MARKING Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-721.C 9N95 Power MOSFET
● ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 950 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (TC = 25°C) Pulsed Drain Current (Note 2) ID 9.0 A IDM 36 A Avalanche Current (Note 2) IAR 9.0 A Avalanche Energy Single Pulsed (Note 3) EAS 900 mJ Repetitive(Note 2) EAR 28 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns Power Dissipation 160 W Linear Derating Factor above TC = 25°C PD 1.28 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
