Unisonic Technologies 9NM60-FDS
9NM60-FDS is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.| Part No. | 9NM60-FDS |
|---|---|
| Datasheet | 9NM60-FDS Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 0.6Ω @ VGS=10V, ID=4.5A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 9NM60L-TN3-R 9NM60G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS Packing Tape Reel
● MARKING Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-534.A 9NM60-FDS Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 ±30 V V Drain Current Continuous Pulsed (Note 2) ID IDM 9 18 A A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 45 12.34 mJ V/ns Power Dissipation Junction Temperature PD 110 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
