Unisonic Technologies 9NM70-FDS
9NM70-FDS is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.| Part No. | 9NM70-FDS |
|---|---|
| Datasheet | 9NM70-FDS Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 0.8Ω @ VGS=10V, ID=4.5A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested● SYMBOL 1 Power MOSFET TO-251S
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9NM70L-TMS-T 9NM70G-TMS-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-251S Pin Assignment 123 GDS Packing Tube
● MARKING Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-417.A 9NM70-FDS Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 700 V Gate to Source Voltage Continuous Drain Current Continuous VGSS ID ±30 9 V A Pulsed Drain Current Avalanche Energy Pulsed (Note 2) Single Pulsed (Note 3) IDM EAS 36 A 160 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 8.5 V/ns Power Dissipation PD 100 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
