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9NM95-Q Datasheet PDF

Unisonic Technologies 9NM95-Q

9NM95-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.
Part No. 9NM95-Q
Datasheet 9NM95-Q Download
Manufacturer
Unisonic Technologies
Description 950V N-CHANNEL MOSFET
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9NM95-Q datasheet page 1 preview

DESCRIPTION

The UTC
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FEATURES

* RDS(ON) ≤ 1.3 Ω @ VGS=10V, ID=4.5A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9NM95L-TA3-T 9NM95G-TA3-T 9NM95L-TF3-T 9NM95G-TF3-T 9NM95L-TN3-R 9NM95G-TN3-R 9NM95L-TQ2-T 9NM95G-TQ2-T 9NM95L-TQ2-R 9NM95G-TQ2-R 9NM95L-T3P-T 9NM95G-T3P-T 9NM95L-T47-T 9NM95G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-252 TO-263 TO-263 TO-3P TO-247 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tape Reel Tube Tape Reel Tube Tube Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-384.D 9NM95-Q
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R205-384.D 9NM95-Q Power MOSFET
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ABSOLUTE MAXIMUM RATINGS

(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 950 V Gate-Source Voltage VGSS ±30 V Continuous Dra...
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