Unisonic Technologies BCX70
NPN Epitaxial Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage Emitter-Base Voltage VCEO 45 V VEBO 5 V Collector Current Collector Power Dissipation IC 200 mA PC 350 mW Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.● THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 325
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ELECTRICAL CHARACTERISTICS
(TA =25°C, unless otherwise specified) UNIT °C/W PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time Turn Off Time SYMBOL TEST CONDITIONS BVCEO IC=...