Unisonic Technologies BD435
BD435 is a NPN epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC 1 current gain, etc. The UTC BD435 is suitable for medium power linear and switching applications.| Part No. | BD435 |
|---|---|
| Datasheet | BD435 Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* High DC current gain TO-126● ORDERING INFORMATION Ordering Number Lead Free Halogen Free BD435L-T60-K BD435G-T60-K BD435L-T60-K BD435G-T60-K Note: Pin Assignment: B: Base C: Collector Package TO-126 TO-126 E: Emitter BD435G-T60-K Pin Assignment 123 BCE BCE Packing Bulk Bulk (1) Packing Type (2) Package Type (3) Green Package (1) K: Bulk (2) T60: TO-126 (3) G: Halogen Free and Lead Free, L: Lead Free
● MARKING UTC BD435 1 Date Code L: Lead Free G: Halogen Free Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 3 QW-R221-026.b BD435 Preliminary NPN EPITAXIAL SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS
(TC =25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 32 V Collector-Emitter Voltage VCEO 32 V Collector-Emitter Voltage VCES 32 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Current (Pulse) (Note 1) ICP 7 A Base Current IB 1 A Collector Dissipation (TC=25°C) Pc 36 W Junction Temperature TJ +150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
