Unisonic Technologies BSS169
This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.| Part No. | BSS169 |
|---|---|
| Datasheet | BSS169 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL DEPLETION-MODE SMALL SIGNAL TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
2 1 SOT-23-3 (JEDEC TO-236) 2 1 SOT-23 (EIAJ SC-59)●
FEATURES
* RDS(ON) ≤ 20 Ω @ VGS=0V, ID=0.05A RDS(ON) ≤ 10 Ω @ VGS=10V, ID=0.2A * Depletion mode * dv/dt rated 1 SOT-89● SYMBOL
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free BSS169L-AB3-R BSS169G-AB3-R BSS169L-AE2-R BSS169G-AE2-R BSS169L-AE3-R BSS169G-AE3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-89 SOT-23-3 SOT-23 Pin Assignment 1 2 3 G D S G S D G S D Packing Tape Reel Tape Reel Tape Reel Copyright © 2026 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-B88.J BSS169
● MARKING SOT-89 Power MOSFET SOT-23-3 / SOT-23 UNISONIC TECHNOLOGIES CO., LTD 2 of 5 QW-R502-B88.J BSS169 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current DC Pulse ID 0.17 A 0.68 A SOT-89 1 W Power Dissipation SOT-23-3 PD SOT-23 0.3 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
