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C5305 - 2SC5305

Key Features

  • High hFE for Low base drive requirement.
  • Suitable for half bridge light ballast.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE 1 TO-220 ABSOLUTE MAXIMUM RATINGS (TC=25℃, unless otherwise noted.) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse)* Base Current (DC) Base Current (Pulse)* Power Dissipation (TC=25℃) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC www.DataSheet4U.com ICP IB IBP PC Tj Tstg THERMAL CHARACTERISTICS (TC=25℃, unless otherwise noted.