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DTNN123J - COMPOUND TRANSISTORS

Description

The UTC DTNN123J is an NPN epitaxial transistor; it uses UTC’s advanced technology to provide the customers with low collector -emitter saturation voltage, etc.

Features

  • Two DTC123J chips in a SOT-363 package.
  • Low collector-emitter saturation voltage.
  • With built-in bias resistors.
  • Simplify circuit design.
  • Silicon epitaxial type.
  • The internal tow transistor elements are independent.

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Datasheet preview – DTNN123J

Datasheet Details

Part number DTNN123J
Manufacturer UTC
File Size 223.31 KB
Description COMPOUND TRANSISTORS
Datasheet download datasheet DTNN123J Datasheet
Additional preview pages of the DTNN123J datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD DTNN123J NPN SILICON TRANSISTOR COMPOUND TRANSISTORS  DESCRIPTION The UTC DTNN123J is an NPN epitaxial transistor; it uses UTC’s advanced technology to provide the customers with low collector -emitter saturation voltage, etc.  FEATURES * Two DTC123J chips in a SOT-363 package * Low collector-emitter saturation voltage * With built-in bias resistors * Simplify circuit design * Silicon epitaxial type. * The internal tow transistor elements are independent.
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