Unisonic Technologies DTNN123J
DTNN123J is an NPN epitaxial transistor; it uses UTC’s advanced technology to provide the customers with low collector -emitter saturation voltage, etc.| Part No. | DTNN123J |
|---|---|
| Datasheet | DTNN123J Download |
| Manufacturer |  Unisonic Technologies |
| Description | COMPOUND TRANSISTORS |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* Two DTC123J chips in a SOT-363 package * Low collector-emitter saturation voltage * With built-in bias resistors * Simplify circuit design * Silicon epitaxial type. * The internal tow transistor elements are independent.● EQUIVALENT CIRCUIT
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package DTNN123JL-AL6-R DTNN123JG-AL6-R SOT-363 Note: Pin Assignment: G: GND I: Input O: Output Pin Assignment 123456 G1 I1 O2 G2 I2 O1 Packing Tape Reel DTNN123JG-AL6-R (1)Packing Type (2)Package Type (3)Green Package (1) R: Tape Reel (2) AL6: SOT-363 (3) G: Halogen Free and Lead Free, L: Lead Free
● MARKING Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 3 QW-R208-065.A DTNN123J NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC 50 V Input Voltage VIN -5 ~ +12 V Output Current IO 100 mA IC(MAX.) 100 mA Power Dissipation PD 150 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
