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F17NP055 - N-CHANNEL / P-CHANNEL Power MOSFET

Description

The UTC F17NP055 incorporates a N-channel MOSFET and a P-channel MOSFET enhancement mode silicon gate power MOSFET with Fast Body Diode.

is designed high voltage, high speed power switching applications such, is designed to have better characteristics.

Features

  • S.
  • N-.

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Datasheet Details

Part number F17NP055
Manufacturer UTC
File Size 247.98 KB
Description N-CHANNEL / P-CHANNEL Power MOSFET
Datasheet download datasheet F17NP055 Datasheet
Additional preview pages of the F17NP055 datasheet.

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    UNISONIC TECHNOLOGIES CO., LTD F17NP055 Preliminary DUAL ENHANCEMENT MODE (N-CHANNEL / P-CHANNEL)  DESCRIPTION The UTC F17NP055 incorporates a N-channel MOSFET and a P-channel MOSFET enhancement mode silicon gate power MOSFET with Fast Body Diode. is designed high voltage, high speed power switching applications such, is designed to have better characteristics. such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * N-CHANNEL: 55V/17A RDS(on) ≤ 44 mΩ @ VGS=10V, ID=8.5A * P-CHANNEL: -55V/-17A RDS(on) ≤ 134 mΩ @ VGS=-10V, ID=-8.
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