F17NP055 Overview
The UTC F17NP055 incorporates a N-channel MOSFET and a P-channel MOSFET enhancement mode silicon gate power MOSFET with Fast Body Diode. is designed high voltage, high speed power switching applications such, is designed to have better characteristics. such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
F17NP055 Key Features
- N-CHANNEL: 55V/17A RDS(on) ≤ 44 mΩ @ VGS=10V, ID=8.5A
- P-CHANNEL: -55V/-17A RDS(on) ≤ 134 mΩ @ VGS=-10V, ID=-8.5A
- Fast body diode MOSFET technology
- High switching speed
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