Unisonic Technologies F17NP055
The UTC F17NP055 incorporates a N-channel MOSFET and a P-channel MOSFET enhancement mode silicon gate power MOSFET with Fast Body Diode. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.| Part No. | F17NP055 |
|---|---|
| Datasheet | F17NP055 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL / P-CHANNEL Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
is designed high voltage, high speed power switching applications such, is designed to have better characteristics. such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.●
FEATURES
* N-CHANNEL: 55V/17A RDS(on) ≤ 44 mΩ @ VGS=10V, ID=8.5A * P-CHANNEL: -55V/-17A RDS(on) ≤ 134 mΩ @ VGS=-10V, ID=-8.5A * Fast body diode MOSFET technology * High switching speed● SYMBOL Power MOSFET SOP-8 Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-858.a F17NP055 Preliminary Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package F17NP055L-S08-R F17NP055G-S08-R SOP-8 Note: Pin Assignment: G: Gate D: Drain S: Source 1 2 Pin Assignment 3456 7 8 Packing S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel
● MARKING UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R205-858.a F17NP055 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS N-CHANNEL P-CHANNEL U...
