F3N70-LC
DESCRIPTION
The UTC F3N70-LC is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching applications such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
- FEATURES
- RDS(ON) ≤ 4.6 Ω @ VGS=10V, ID=1.5A
- Fast body diode MOSFET technology
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
- SYMBOL
Power MOSFET
- ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
F3N70L-TN3-R
F3N70G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package TO-252
Pin Assignment
Packing Tape Reel
F3N70G-TN3-R
(1)Packing Type (2)Package Type (3)Green Package
(1)...
