Unisonic Technologies F75NM60Z
F75NM60Z is an N-channel enhancement mode silicon-gate power MOSFET with fast body diode and ESD Type, designed for high-voltage, high-speed power switching applications.| Part No. | F75NM60Z |
|---|---|
| Datasheet | F75NM60Z Download |
| Manufacturer |  Unisonic Technologies |
| Description | 600V N-CHANNEL SUPER-JUNCTION MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.●
FEATURES
* RDS(ON) ≤ 46 mΩ @ VGS=10V, ID=35A * Fast body diode MOSFET technology * Low switching losses due to reduced Qrr * Single Pulse Avalanche Energy Rated * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Avalanche energy tested● SYMBOL Power MOSFET Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-905.B F75NM60Z
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package F75NM60ZL-T47-T F75NM60ZG-T47-T TO-247 F75NM60ZL-T474-T F75NM60ZG-T474-T TO-247-4 Note: Pin Assignment: G: Gate C: Collector E: Emitter Power MOSFET Pin Assignment 1234 GDS DSSG Packing Tube Tube
● MARKING UNISONIC TECHNOLOGIES CO., LTD 2 of 8 QW-R205-905.B F75NM60Z Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage...
