Unisonic Technologies F7NM65
F7NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.| Part No. | F7NM65 |
|---|---|
| Datasheet | F7NM65 Download |
| Manufacturer |  Unisonic Technologies |
| Description | 650V N-CHANNEL SUPER-JUNCTION MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 0.9 Ω @ VGS=10V, ID=3.5A * High switching Speed * 100% avalanche tested * Improved dv/dt capability● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package F7NM65L-TN3-R F7NM65G-TN3-R TO-252 F7NM65L-K04-8080-R F7NM65G-K04-8080-R DFN8080-4 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345 GDS - GSSSD Packing Tape Reel Tape Reel Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-929.b F7NM65
● MARKING TO-252 Preliminary Power MOSFET DFN8080-4 UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R205-929.b F7NM65 Preliminary Power MOSFET
●
ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Drain Current (TC=25°C) Continuous Pulsed (Note 2) ID IDM 7 14 A A Avalanche Energy Single Pulsed (Note 3) EAS 128 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.75 V/ns Power Dissipation TO-252 DFN8080-4 PD 42 W 25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
