F80NM60Z Description
The UTC F80NM60Z is an N-channel enhancement mode silicon-gate power MOSFET with fast body diode and ESD Type, designed for high-voltage, high-speed power switching applications. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
F80NM60Z Key Features
- RDS(ON) ≤ 35 mΩ @ VGS=10V, ID=40A
- Fast body diode MOSFET technology
- Low switching losses due to reduced Qrr
- Single Pulse Avalanche Energy Rated
- Fast Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Avalanche energy tested
- SYMBOL
- ORDERING INFORMATION