Unisonic Technologies F80NM60Z
F80NM60Z is an N-channel enhancement mode silicon-gate power MOSFET with fast body diode and ESD Type, designed for high-voltage, high-speed power switching applications.| Part No. | F80NM60Z |
|---|---|
| Datasheet | F80NM60Z Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.●
FEATURES
* RDS(ON) ≤ 35 mΩ @ VGS=10V, ID=40A * Fast body diode MOSFET technology * Low switching losses due to reduced Qrr * Single Pulse Avalanche Energy Rated * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Avalanche energy tested● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package F80NM60ZL-T47-T F80NM60ZG-T47-T TO-247 Note: Pin Assignment: G: Gate C: Collector E: Emitter Pin Assignment 1 2 3 G D S Packing Tube Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-906.A F80NM60Z
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 8 QW-R205-906.A F80NM60Z Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID Pulsed (Not...
