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F9N100-FC - N-CHANNEL POWER MOSFET

Description

The UTC F9N100-FC N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode.

is designed high voltage, high speed power switching applications such.

such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=4.5A.
  • Fast body diode MOSFET technology.
  • Low switching losses due to reduced Qrr.
  • Fast Switching Speeds.
  • 100% avalanche tested.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Avalanche energy tested.
  • SYMBOL.

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Datasheet preview – F9N100-FC

Datasheet Details

Part number F9N100-FC
Manufacturer UTC
File Size 199.68 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet F9N100-FC Datasheet
Additional preview pages of the F9N100-FC datasheet.

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    UNISONIC TECHNOLOGIES CO., LTD F9N100-FC Preliminary 9.0A, 1000V N-CHANNEL POWER MOSFET POWER MOSFET  DESCRIPTION The UTC F9N100-FC N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode. is designed high voltage, high speed power switching applications such. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.  FEATURES * RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=4.
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