Unisonic Technologies F9N100-FC
The UTC F9N100-FC N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode.| Part No. | F9N100-FC |
|---|---|
| Datasheet | F9N100-FC Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
is designed high voltage, high speed power switching applications such. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.●
FEATURES
* RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=4.5A * Fast body diode MOSFET technology * Low switching losses due to reduced Qrr * Fast Switching Speeds * 100% avalanche tested * Linear Transfer Characteristics * High Input Impedance * Avalanche energy tested● SYMBOL
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free F9N100L-TA3-T F9N100G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 7 QW-R209-446.a F9N100-FC
● MARKING Preliminary POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R209-446.a F9N100-FC Preliminary POWER MOSFET
● ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1000 V Gate-Source Vol...
