Unisonic Technologies MJE13001-P
NPN SILICON POWER TRANSISTOR
| Part No. | MJE13001-P |
|---|---|
| Datasheet | MJE13001-P Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN SILICON POWER TRANSISTOR |
| Buy | Stock & Price |
FEATURES
* Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-A-B MJE13001G-P-x-T92-A-B MJE13001L-P-x-T92-A-K MJE13001G-P-x-T92-A-K MJE13001L-P-x-T92-F-B MJE13001G-P-x-T92-F-B MJE13001L-P-x-T92-F-K MJE13001G-P-x-T92-F-K Package TO-92 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 E C B E C B B C E B C E Packing Tape Box Bulk Tape Box Bulk MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-088.C MJE13001-P NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 400 V Collector-Base Voltage VCBO 600 V Emitter Base Voltage VEBO 7 V Collector Current IC 200 mA Collector Power Dissipation PC 750 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and function...
