Unisonic Technologies MJE13003D-P
MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.| Part No. | MJE13003D-P |
|---|---|
| Datasheet | MJE13003D-P Download |
| Manufacturer |  Unisonic Technologies |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
The UTC MJE13003D-P is a NPN Power Transistor.●
FEATURES
* Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antiparallel Collector-Emitter Diode● INTERNAL SCHEMATIC DIAGRAM C (2) B (1) E (3)
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MJE13003DL-P-x-T92-B MJE13003DG-P-x-T92-B TO-92 MJE13003DL-P-x-T92-K MJE13003DG-P-x-T92-K TO-92 Note: Pin Assignment: C: Collector B: Base E: Emitter Pin Assignment 123 ECB ECB Packing Tape Box Bulk Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R201-085.d MJE13003D-P
● MARKING Preliminary NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 5 QW-R201-085.d MJE13003D-P Preliminary NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector- Emitter Voltage (VBE =0) VCES 700 V Collector-Emitter Voltage (IB =0) VCEO 400 V Emitter-Base Voltage (IC=0, IB=0.75A, tP<10μS) VEBO...
