Unisonic Technologies MJE13005-H
NPN SILICON POWER TRANSISTORS
DESCRIPTION
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.●
FEATURES
* VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 700V blocking capability * SOA and switching applications information●
APPLICATIONS
* Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits● ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13005L-H-x-T92-B MJE13005G-H-x-T92-B MJE13005-L-H-x-T92-K MJE13005G-H-x-T92-K Note: Pin assignment: E: Emitter B: Base C: Collector Package TO-92 TO-92 Pin Assignment 123 BCE BCE Packing Tape Box Bulk
● MARKING Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 8 QW-R221-024.a MJE13005-H NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT Collector-Emitter V...