Unisonic Technologies MJE13009D
MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lights electronic ballast, high frequency switching power supplies, high frequency power transforms or common power amplifiers, etc.| Part No. | MJE13009D |
|---|---|
| Datasheet | MJE13009D Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
The UTC FEATURES
* High Breakdown Voltage * High Current Capability * High Switching Speed * High Reliability * RoHS-Compliant Product INTERNAL SCHEMATIC DIAGRAM C (2) B (1) E (3) ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free MJE13009DL-TA3-T MJE13009DG-TA3-T Package TO-220 Pin Assignment 123 BCE Packing Tube Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 5 QW-R203-041.A MJE13009D NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS
(TC=25°C) PARAMETER SYMBOL RATINGS UNIT Collector- Emitter Voltage (VBE =-1.5V) VCEV 700 V Collector-Emitter Voltage (IB =0) Emitter-Base Voltage VCEO 400 V VEBO 9 V Collector Current DC Pulse(Note 2) IC ICM 12 A 24 A Base Current DC Pulse(Note 2) IB IBM 6A 12 A Emitter Current DC Pulse(Note 2) IE IEM 18 A 36 A Total Power Dissipation Linear Derating Factor Above TA=25°C PD 2W 16 mW/°C Total Power Dissipation Linear Derating Factor Above TC=25°C PD 100 W 800 mW/°C Operating Junction Temperature TJ -65 ~ +150 °C Storage Temperature TSTG -65 ~ +150 °C Notes: 1.
