Unisonic Technologies MJE13011
NPN EPITAXIAL SILICON TRANSISTOR
| Part No. | MJE13011 |
|---|---|
| Datasheet | MJE13011 Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
FEATURES
* High voltage, high speed switching * High reliability 1 TO-220F *Pb-free plating product number: MJE13011L PIN CONFIGURATION PIN NO. 1 2 3 PIN NAME BASE COLLECTOR EMITTER ORDERING INFORMATION Order Number Normal Lead Free Plating MJE13011-TF3-T MJE13011L-TF3-T Package TO-220F Packing Tube Copyright © 2005 Unisonic Technologies Co.,LTD 1 of 4 QW-R219-006,B MJE13011 PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature NPN EPITAXIAL SILICON TRANSISTORABSOLUTE MAXIMUM RATINGS
(TC = 25 ) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB PD TJ TSTG RATINGS 450 400 400 7 10 3 80 +150 -40 ~ +150 UNIT V V V V A A WELECTRICAL SPECIFICATIONS
(TC =25 , Unless Otherwise Specified.) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Cu...
