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MMBT1116 Datasheet PNP Transistor

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD MMBT1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR.

General Description

Complement to UTC MMBT1616/A 3 2 1 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MMBT1116L-x-AE3-R MMBT1116G-x-AE3-R SOT-23 MMBT1116AL-x-AE3-R MMBT1116AG-x-AE3-R SOT-23 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 123 BEC BEC Packing Tape Reel Tape Reel  MARKING UTC MMBT1116 11 L: Lead Free G: Halogen Free UTC MMBT1116A 11A L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., LTD 1 of 4 QW-R206-098.E MMBT1116/A PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage MMBT1116 MMBT1116A VCBO -60 -80 V Collector to Emitter Voltage MMBT1116 MMBT1116A VCEO -50 -60 V Emitter to Base Voltage VEBO -6 V Collector Current DC Pulse(Note2) IC ICM -1 -2 A A Total Collector Dissipation PC 350 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

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