Datasheet Details
| Part number | MMBT1616A |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 228.22 KB |
| Description | NPN TRANSISTOR |
| Datasheet | MMBT1616A MMBT1616 Datasheet (PDF) |
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Overview: UNISONIC TECHNOLOGIES CO., LTD MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MMBT1616A |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 228.22 KB |
| Description | NPN TRANSISTOR |
| Datasheet | MMBT1616A MMBT1616 Datasheet (PDF) |
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* Audio frequency power amplifier * Medium speed switching 3 2 1 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Order Number Lead Free Halogen Free MMBT1616L-x-AE3-R MMBT1616G-x-AE3-R MMBT1616AL-x-AE3-R MMBT1616AG-x-AE3-R Note: Pin Assignment: B: Base E: Emitter Collector Package SOT-23 SOT-23 Pin Assignment 123 BEC BEC Packing Tape Reel Tape Reel MMBT1616G-x-AE3-R (1) Packing Type (2) Package Type (3) Rank (4) Green Package (1) R: Tape Reel (2) AE3: SOT-23 (3) x: refer to Classification of hFE1 (4) G: Halogen Free and Lead Free, L: Lead Free MARKING UTC MMBT1616 UTC MMBT1616A www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-036.J MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage MMBT1616 MMBT1616A VCBO 60 120 V Collector to Emitter Voltage MMBT1616 MMBT1616A VCEO 50 60 V Emitter to Base Voltage VEBO 6 V Collector Current DC IC 1A Collector Current Pulse IC 2A Total Collector Dissipation PD 350 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
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