MMBT42 Datasheet | Unisonic Technologies

DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. 1 3 NPN EPITAXIAL SILICON TRANSISTOR FEATURES - Collector-Emitter voltage: VCEO=300V - High current gain - Power Dissipation: PD (max) =350m W SOT-23 MARKING - Pb-free plating product number: MMBTA42L PIN CONFIGURATION 1D .. PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector ORDERING INFORMATION Order Number Normal Lead free MMBTA42-AE3-R MMBTA42L-AE3-R Package SOT-23 Packing Tape Reel .unisonic..tw Copyright © 2005 Unisonic Technologies Co.,LTD. QW-R206-004.B MMBTA42 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic PD TJ TSTG NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) RATINGS 300 300 6 500 350 +150 -40 ~ +150 UNIT V V V m A m W °C °C ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note) Current Gain Bandwidth Product Collector Base Capacitance SYMBOL BVCBO BVCEO BVEBO VCE(sat) VBE(sat) ICBO IEBO h FE f T Ccb TEST CONDITIONS Ic=100µA, IE=0 Ic=1m A, IB=0 IE=100µA, Ic=0 Ic=20m A, IB=2m A Ic=20m A, IB=2m A VCB=200V, IE=0 VBE=6V, Ic=0 VCE=10V, Ic=1m A VCE=10V, Ic=10m A VCE=10V, Ic=30m A VCE=20V, Ic=10m A, f=100MHz VCB=20V, IE=0, f=1MHz MIN 300 300 6 TYP MAX UNIT V V V V V n A n A 0.2 0.90 100 100 80 80 80 50 300 MHz p F UNISONIC TECHNOLOGIES CO., LTD .unisonic..tw QW-R206-004.B MMBTA42 TYPICAL CHARACTERISTICS DC Current Gain 10 DC Current Gain , HFE NPN EPITAXIAL SILICON TRANSISTOR Saturation Voltage...