Datasheet4U Logo Datasheet4U.com

MMBT9015 - PNP EPITAXIAL SILICON TRANSISTOR

Key Features

  • S.
  • High total power dissipation. (450mW).
  • Excellent hFE linearity.
  • Complementary to UTC MMBT9014 3 1 2 SOT-23 (JEDEC TO-236).

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  FEATURES *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC MMBT9014 3 1 2 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION Ordering Number MMBT9015G-x-AE3-R Note: Pin Assignment: E: Emitter B: Base Package SOT-23 C: Collector Pin Assignment 123 EBC Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-023.