MMDT8150 Datasheet PDF (LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR)

MMDT8150 - LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

Description

The UTC MMDT8150 is a Dual NPN epitaxial planar transistor.

It has low VCE(SAT) performance and the transistor elements are independent to eliminate interference.

Features

ES.
Low VCE(SAT), VCE(SAT)=40mV (typ. )@IC / IB = 50mA / 2.5mA.
Transistor elements are independent to eliminate interference.
Mounting cost and area can be cut in half.

Datasheet Details

Part number	MMDT8150
Manufacturer	UTC
File Size	138.68 KB
Description	LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	MMDT8150 Datasheet
Additional preview pages of the MMDT8150 datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE(SAT) performance and the transistor elements are independent to eliminate interference. FEATURES * Low VCE(SAT), VCE(SAT)=40mV (typ.)@IC / IB = 50mA / 2.5mA * Transistor elements are independent to eliminate interference. * Mounting cost and area can be cut in half.

Published: Nov 22, 2013 |