SSM3K333RG-AE3-R Datasheet PDF | Unisonic Technologies

Unisonic Technologies SSM3K333RG-AE3-R

SSM3K333R is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC SSM3K333R is usually used in power management switching applications.

Part No.	SSM3K333RG-AE3-R
Datasheet	SSM3K333RG-AE3-R Download
Manufacturer	Unisonic Technologies
Description	N-CHANNEL POWER MOSFET
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SSM3K333RG-AE3-R datasheet page 1 preview

DESCRIPTION

Power MOSFET The UTC

FEATURES

* RDS(ON)<42mΩ @ VGS=4.5V RDS(ON)<28mΩ @ VGS=10V * High switching speed * Low gate charge (Typ.=3.4nC) * Low CRSS (Typ.=28pF) SYMBOL 3. Drain 2.Gate 1.Source ORDERING INFORMATION Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel Ordering Number Lead Free Halogen Free SSM3K333RL-AE3-R SSM3K333RG-AE3-R Note: Pin Assignment: G: Gate D: Drain S: Source MARKING Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-736.a SSM3K333R PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Preliminary SYMBOL VDSS VGSS ID (Note 2) IDM (Note 2) Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(TA=25°C, unless otherwise specified) RATINGS UNIT 30 V ±20 V 6 A 12 A 1 W Power Dissipation PD (Note 3) t=10s 2 W Channel Temperature TCH 150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.