DESCRIPTION
The UTC FEATURE *Low VCE(sat) *High current gain 1 TO-220 1:BASE 2:COLLECTOR 3:EMITTER MAXIMUM RATINGS
(Ta=25°C) CHARACTERISTICS Collector Base Voltage Collector to Emitter Voltage Emitter To base Voltage Collector Current Junction Temperature Storage Temperature Total Power Dissipations SYMBOL VCBO VCEO VEBO IC Tj Tstg PD VALUE 40 30 5 10 150(Max) -55 ~ +150 65 UNITS V V V A °C °C W CHARACTERISTICS(Ta=25°C) SYMBOL BVCEO ICBO ICEO IEBO VCE(SAT) VBE(ON) hFE1 hFE2 TEST CONDITIONS IC=100mA VCB=40V VCE=20V VEB=5V IC=10A,IB=10mA IC=5mA,VCE=2.0V IC=500mA,VCE=2.0V IC=10A,VCE=2.0V MIN 30 TYP MAX 1 1 100 2.0 2.0 60 60 UNIT V µA µA nA V V K K 2 1 20 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R203-004,A UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR TYPICAL PERFORMANCE CHARACTERISTICS CURRENT GAIN VS. COLLECTOR CURRENT 10 4 Output Capacitance( pF) 10 3 OUTPUT CAPACITANCE VS. REVERSE-BIASED VOLTAGE Current Gain(Hfe) 10 3 10 2 10 2 10 1 10 10 Collector Current(mA) 2 3 10 1 10 4 10 -1 1 10 Reverse-Biased Voltage 10 2 10 4 ON VOLTAGE VS.
Unisonic Technologies
