Unisonic Technologies TUL1102
The TUL1102 is manufactured which is using high voltage Multi Epitaxial Planar technology for high voltage capability and high switching speeds. For enhancing switching speeds while maintaining a wide RBSOA, the TUL1102 uses a Cellular Emitter structure with planar edge termination.| Part No. | TUL1102 |
|---|---|
| Datasheet | TUL1102 Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
Because of an increased intermediate layer which has an intrinsic ruggedness, and it enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection.●
FEATURES
* High voltage * Dynamic parameters: low spread * For reliable operation: minimum lot-to-lot spread * High switching speed● ORDERING INFORMATION Ordering Number Lead Free Plating Halogen-Free TUL1102L-TA3-T TUL1102G-TA3-T TUL1102L-TF1-T TUL1102G-TF1-T TUL1102L-TM3-T TUL1102G-TM3-T TUL1102L-TN3-R TUL1102G-TN3-R TUL1102L-TQ2-T TUL1102G-TQ2-T TUL1102L-TQ2-R TUL1102G-TQ2-R Package TO-220 TO-220F1 TO-251 TO-252 TO-263 TO-263 Pin Assignment 123 BCE BCE BCE BCE BCE BCE Packing Tube Tube Tube Tape Reel Tube Tape Reel
● MARKING INFORMATION PACKAGE TO-220 TO-220F1 TO-251 TO-252 TO-263 Copyright © 2014 Unisonic Technologies Co., Ltd MARKING 1 of 5 QW-R203-034.D TUL1102 NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT Collector-E...
